inchange semiconductor product specification isc silicon npn power transistor BU608D description high voltage: v cev = 400v(min) fast switching speed- : t f = 0.5 s(max) low saturation voltage- : v ce(sat) = 1.0v(max)@ i c = 6a applications designed for use in horizontal deflection output stages of tv?s and crt?s absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 400 v v cev collector-emitter voltage 400 v v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 6 v i c collector current-continuous 7 a i cm collector current-peak 10 a i b b base current 4 a p c collector power dissipation @ t c =25 90 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU608D electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ;i b = 0 200 v v ce( sat ) collector-emitter saturation voltage i c = 6a; i b = 1.2a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 6a; i b = 1.2a b 1.5 v h fe dc current gain i c = 2a; v ce = 5v; 15 i cev collector cutoff current v ce = 400v; v be = -1.5v 15 ma i ebo emitter cutoff current v eb = 6v; i c = 0 400 ma f t current-gain?bandwidth product i c = 0.5a ; v ce = 10v, f test = 1mhz 10 mhz v ecf c-e diode forward voltage i f = 5a 1.5 v t f fall time i c = 6a; i b1 = -i b2 = 1.2a, v cc = 40v 0.5 s isc website www.iscsemi.cn 2
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